Extension type:
1. Homerious extension: The film that grows the same material on the substrate of the same material, such as extending the silicon layer on the silicon substrate.
2. Heterogeneous extension: The film that grows different materials on the substrates of different materials, such as extending nitrogen nitrogen (GAN) on the sapphire base or GaaS (GaaS) on the silicon substrate.
Growth technology:
1. Molecular bundle extension (MBE): MBE is a type of atomic or molecular bundle stream accurately in the ultra -high vacuum environment. Film growth technology. This method is particularly suitable for precise control of doping concentration and accurately manufacturing complex heterogeneous structures.
2. Chemical gas deposition (CVD): CVD technology is to decompose gaseous substances by chemical reactions at a certain temperature and form a thin film on the surface of the solid substrate. These include a variety of variants such as low -voltage chemical gas deposition (LPCVD), normally voltage chemical gas deposition (APCVD), and plasma enhanced chemical gas deposition (PECVD).
3. Metal organic chemical qi deposition (MOCVD): MOCVD is a technology that deposits elements to the substrate through the thermal decomposition of metal organic compounds at high temperature. It is especially suitable for the extension of the III-V and II-Vi ethnic compound semiconductor materials, such as GAN, GaaS, INP, etc.
Why do we need an external delay:
1. Control the doped type and concentration: the extension layer can accurately control the doped types (N or P types) and doping concentrations of semiconductor materials, which is extremely critical for making various semiconductor devices (such as crystal pipes, diode, etc.), because because The working nature and performance of the device directly depends on the doping situation.
2. Improve material quality: The crystal structure of the extension layer is perfectly matched with the substrate, which has extremely low deficiency density and can improve the overall performance and reliability of the device. Materials that grow through the extension technology usually have higher purity and less lattice defects, such as incorrectness, impurities, and vacancy.
3. Formation of heterogeneous knots: When creating heterogeneous knot devices (such as HBT, HEMT, etc.), a high -quality interface needs Formation of heterogeneous knots with different structures to achieve new types of physical effects and high -performance electronic devices.
4. Reduce parasitic effect: In certain devices, the impact of the extension technology can be isolated or cushioned the impact of the bottom layer, reducing parasitic capacitors and resistors and other effects, and improving the high -speed performance and work stability of the device.
5. Realize special structure: The extension layer can be used to construct complex structures such as embedded source leakage, ultra -shallow knots, and strain silicon. These structures are essential for improving the switching speed and reducing leakage current of MOSFET and other devices.
6. Improve heat dissipation performance: On some occasions, the extension layer can also be used as a cooling layer. By selecting specific extension materials and thickness, the thermal management of the device is optimized to improve the overall thermal stability.
Difficulties and challenges:
1. Film thickness control: precisely control the thickness of the film to meet the structural requirements of specific devices.
2. Interface quality: Reduce the interface defect between the outer lattice and the substrate to obtain a good charge transmission performance.
3. Large area uniformity: Make sure that a uniform and consistent extension layer grows on a large area lining, which is essential for the production of large -scale integrated circuits.
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