Label and body marking of KSD227GBU can be provided after order.
In stock: 57287
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Standard Packaging Integrated Circuit Components KSD227GBU
Voltage - Collector Emitter Breakdown (Max) | 25V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 400mV @ 30mA, 300mA |
Transistor Type | NPN |
Supplier Device Package | TO-92-3 |
Series | - |
Power - Max | 400mW |
Packaging | Bulk |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | - |
Detailed Description | Bipolar (BJT) Transistor NPN 25V 300mA 400mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 1V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 300mA |
Base Part Number | KSD227 |