Label and body marking of SI3453DV-T1-GE3 can be provided after order.
In stock: 59431
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Standard Packaging Integrated Circuit Components SI3453DV-T1-GE3
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 6-TSOP |
Series | - |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 2.5A, 10V |
Power Dissipation (Max) | 3W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 10V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | P-Channel 30V 3.4A (Tc) 3W (Tc) Surface Mount 6-TSOP |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |