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Standard Packaging Integrated Circuit Components IPP08CNE8N G
Vgs(th) (Max) @ Id | 4V @ 130µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO-220-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 6.4 mOhm @ 95A, 10V |
Power Dissipation (Max) | 167W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 |
Other Names | IPP08CNE8N G-ND IPP08CNE8NG IPP08CNE8NGX IPP08CNE8NGXK SP000096466 SP000680846 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 6690pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs | 99nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 85V |
Detailed Description | N-Channel 85V 95A (Tc) 167W (Tc) Through Hole PG-TO-220-3 |
Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |