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Standard Packaging Integrated Circuit Components IRF6215L
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-262 |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 6.6A, 10V |
Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names | *IRF6215L |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 150V |
Detailed Description | P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262 |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |