Label and body marking of KSD1616GBU can be provided after order.
In stock: 58776
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Standard Packaging Integrated Circuit Components KSD1616GBU
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
Transistor Type | NPN |
Supplier Device Package | TO-92-3 |
Series | - |
Power - Max | 750mW |
Packaging | Bulk |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 160MHz |
Detailed Description | Bipolar (BJT) Transistor NPN 50V 1A 160MHz 750mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 1A |
Base Part Number | KSD1616 |