Label and body marking of JAN2N6849 can be provided after order.
In stock: 52551
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Standard Packaging Integrated Circuit Components JAN2N6849
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-39 |
Series | Military, MIL-PRF-19500/564 |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 6.5A, 10V |
Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Packaging | Bulk |
Package / Case | TO-205AF Metal Can |
Other Names | JAN2N6849-MIL |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Gate Charge (Qg) (Max) @ Vgs | 34.8nC @ 10V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | P-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39 |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |