Label and body marking of 2N5551TF can be provided after order.
In stock: 55381
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Standard Packaging Integrated Circuit Components 2N5551TF
Voltage - Collector Emitter Breakdown (Max) | 160V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Transistor Type | NPN |
Supplier Device Package | TO-92-3 |
Series | - |
Power - Max | 625mW |
Packaging | Tape & Reel (TR) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Other Names | 2N5551TF-ND 2N5551TFTR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 7 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 100MHz |
Detailed Description | Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
Current - Collector (Ic) (Max) | 600mA |
Base Part Number | 2N5551 |