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Standard Packaging Integrated Circuit Components APT34N80B2C3G
Vgs(th) (Max) @ Id | 3.9V @ 2mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | T-MAX™ [B2] |
Series | - |
Rds On (Max) @ Id, Vgs | 145 mOhm @ 22A, 10V |
Power Dissipation (Max) | 417W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 Variant |
Other Names | APT34N80B2C3GMI APT34N80B2C3GMI-ND |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 12 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 4510pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 355nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800V |
Detailed Description | N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2] |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |