In stock: 59349
We are stocking distributor of NSVMMUN2212LT1G with very competitive price. Check out NSVMMUN2212LT1G newest pirce, inventory and lead time now by using the quick RFQ Form. Our commitment to quality and authenticity of NSVMMUN2212LT1G is unwavering, and we have implemented stringent quality inspection and delivery processes to ensure the integrity of NSVMMUN2212LT1G. You can also find NSVMMUN2212LT1G Datasheet here.
Standard Packaging Integrated Circuit Components NSVMMUN2212LT1G
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | SOT-23-3 (TO-236) |
Series | - |
Resistor - Emitter Base (R2) | 22 kOhms |
Resistor - Base (R1) | 22 kOhms |
Power - Max | 246mW |
Packaging | Tape & Reel (TR) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Other Names | NSVMMUN2212LT1G-ND NSVMMUN2212LT1GOSTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 24 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |