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Standard Packaging Integrated Circuit Components APT50GP60B2DQ2G
Voltage - Collector Emitter Breakdown (Max) | 600V |
---|---|
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
Test Condition | 400V, 50A, 4.3 Ohm, 15V |
Td (on/off) @ 25°C | 19ns/85ns |
Switching Energy | 465µJ (on), 635µJ (off) |
Series | POWER MOS 7® |
Power - Max | 625W |
Packaging | Tube |
Package / Case | TO-247-3 Variant |
Other Names | APT50GP60B2DQ2GMI APT50GP60B2DQ2GMI-ND |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | PT |
Gate Charge | 165nC |
Detailed Description | IGBT PT 600V 150A 625W Through Hole |
Current - Collector Pulsed (Icm) | 190A |
Current - Collector (Ic) (Max) | 150A |