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Standard Packaging Integrated Circuit Components C2M0160120D
Vgs(th) (Max) @ Id | 2.5V @ 500µA |
---|---|
Vgs (Max) | +25V, -10V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247-3 |
Series | Z-FET™ |
Rds On (Max) @ Id, Vgs | 196 mOhm @ 10A, 20V |
Power Dissipation (Max) | 125W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 52 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 527pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs | 32.6nC @ 20V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Drain to Source Voltage (Vdss) | 1200V |
Detailed Description | N-Channel 1200V 19A (Tc) 125W (Tc) Through Hole TO-247-3 |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |