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Standard Packaging Integrated Circuit Components BSP299H6327XUSA1
Vgs(th) (Max) @ Id | 4V @ 1mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-SOT223-4 |
Series | SIPMOS® |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 10V |
Power Dissipation (Max) | 1.8W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-261-4, TO-261AA |
Other Names | BSP299H6327XUSA1-ND BSP299H6327XUSA1TR SP001058628 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 500V |
Detailed Description | N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4 |
Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |