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Standard Packaging Integrated Circuit Components IRFH5110TR2PBF
Vgs(th) (Max) @ Id | 4V @ 100µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-PQFN (5x6) |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 37A, 10V |
Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | 8-PowerVDFN |
Other Names | IRFH5110TR2PBFCT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 3152pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 11A (Ta), 63A (Tc) 3.6W (Ta), 114W (Tc) Surface Mount 8-PQFN (5x6) |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) |