Label and body marking of EDB8164B4PR-1D-F-R TR can be provided after order.
In stock: 50131
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Standard Packaging Integrated Circuit Components EDB8164B4PR-1D-F-R TR
Write Cycle Time - Word, Page | - |
---|---|
Voltage - Supply | 1.14 V ~ 1.95 V |
Technology | SDRAM - Mobile LPDDR2 |
Series | - |
Packaging | Tape & Reel (TR) |
Other Names | EDB8164B4PR-1D-F-R TR-ND EDB8164B4PR-1D-F-RTR |
Operating Temperature | -30°C ~ 85°C (TC) |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Memory Type | Volatile |
Memory Size | 8Gb (128M x 64) |
Memory Interface | Parallel |
Memory Format | DRAM |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | SDRAM - Mobile LPDDR2 Memory IC 8Gb (128M x 64) Parallel 533MHz |
Clock Frequency | 533MHz |