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Standard Packaging Integrated Circuit Components IPN80R1K2P7ATMA1
Vgs(th) (Max) @ Id | 3.5V @ 80µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-SOT223 |
Series | CoolMOS™ P7 |
RoHS Status | RoHS Compliant |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 1.7A, 10V |
Power Dissipation (Max) | 6.8W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | SOT-223-3 |
Other Names | IPN80R1K2P7ATMA1CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 500V |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800V |
Detailed Description | N-Channel 800V 4.5A (Tc) 6.8W (Tc) Surface Mount PG-SOT223 |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |