Label and body marking of RQ3E080BNTB can be provided after order.
In stock: 58398
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Standard Packaging Integrated Circuit Components RQ3E080BNTB
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-HSMT (3.2x3) |
Series | - |
Rds On (Max) @ Id, Vgs | 15.2 mOhm @ 8A, 10V |
Power Dissipation (Max) | 2W (Ta) |
Packaging | Cut Tape (CT) |
Package / Case | 8-PowerVDFN |
Other Names | RQ3E080BNTBCT |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 40 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3) |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |