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Standard Packaging Integrated Circuit Components 2N7635-GA
Vgs(th) (Max) @ Id | - |
---|---|
Vgs (Max) | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Supplier Device Package | TO-257 |
Series | - |
Rds On (Max) @ Id, Vgs | 415 mOhm @ 4A |
Power Dissipation (Max) | 47W (Tc) |
Packaging | Bulk |
Package / Case | TO-257-3 |
Other Names | 1242-1146 |
Operating Temperature | -55°C ~ 225°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 35V |
FET Type | - |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | 650V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257 |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |