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Standard Packaging Integrated Circuit Components SCT3120ALGC11
Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
---|---|
Vgs (Max) | +22V, -4V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247N |
Series | - |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
Power Dissipation (Max) | 103W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |