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Standard Packaging Integrated Circuit Components SUD20N10-66L-GE3
Vgs(th) (Max) @ Id | 3V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252 |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 66 mOhm @ 6.6A, 10V |
Power Dissipation (Max) | 2.1W (Ta), 41.7W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Other Names | SUD20N10-66L-GE3-ND SUD20N10-66L-GE3TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 16.9A (Tc) 2.1W (Ta), 41.7W (Tc) Surface Mount TO-252 |
Current - Continuous Drain (Id) @ 25°C | 16.9A (Tc) |