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Standard Packaging Integrated Circuit Components STH110N10F7-2
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | H2Pak-2 |
Series | DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 55A, 10V |
Power Dissipation (Max) | 150W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names | 497-13549-1 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 38 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 5117pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 110A (Tc) 150W (Tc) Surface Mount H2Pak-2 |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |