Label and body marking of MR25H10CDCR can be provided after order.
In stock: 58328
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Standard Packaging Integrated Circuit Components MR25H10CDCR
Write Cycle Time - Word, Page | - |
---|---|
Voltage - Supply | 2.7 V ~ 3.6 V |
Technology | MRAM (Magnetoresistive RAM) |
Supplier Device Package | 8-DFN-EP, Large Flag (5x6) |
Series | - |
Packaging | Tape & Reel (TR) |
Package / Case | 8-TDFN Exposed Pad |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Memory Type | Non-Volatile |
Memory Size | 1Mb (128K x 8) |
Memory Interface | SPI |
Memory Format | RAM |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-DFN-EP, Large Flag (5x6) |
Clock Frequency | 40MHz |