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Standard Packaging Integrated Circuit Components MMUN2111LT1G
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Transistor Type | PNP - Pre-Biased |
Supplier Device Package | SOT-23-3 (TO-236) |
Series | - |
Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 10 kOhms |
Power - Max | 246mW |
Packaging | Tape & Reel (TR) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Other Names | MMUN2111LT1GOS MMUN2111LT1GOS-ND MMUN2111LT1GOSTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 36 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | MMUN21**L |