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Standard Packaging Integrated Circuit Components STP11N60DM2
Vgs(th) (Max) @ Id | 5V @ 250µA |
---|---|
Vgs (Max) | ±25V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220 |
Series | MDmesh™ DM2 |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 5A, 10V |
Power Dissipation (Max) | 110W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 |
Other Names | 497-16932 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 42 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 614pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 10A (Tc) 110W (Tc) Through Hole TO-220 |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |