Label and body marking of NSV40302PDR2G can be provided after order.
In stock: 52874
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Standard Packaging Integrated Circuit Components NSV40302PDR2G
Voltage - Collector Emitter Breakdown (Max) | 40V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 115mV @ 200mA, 2A |
Transistor Type | NPN, PNP |
Supplier Device Package | 8-SOIC |
Series | - |
Power - Max | 653mW |
Packaging | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Other Names | NSV40302PDR2G-ND NSV40302PDR2GOSTR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 6 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 100MHz |
Detailed Description | Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100MHz 653mW Surface Mount 8-SOIC |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A, 2V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 3A |