Label and body marking of MB85RS2MTPH-G-JNE1 can be provided after order.
In stock: 52079
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Standard Packaging Integrated Circuit Components MB85RS2MTPH-G-JNE1
Write Cycle Time - Word, Page | - |
---|---|
Voltage - Supply | 1.8 V ~ 3.6 V |
Technology | FRAM (Ferroelectric RAM) |
Supplier Device Package | 8-DIP |
Series | - |
Packaging | Tube |
Package / Case | 8-DIP (0.300", 7.62mm) |
Other Names | 865-1264-5 |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Memory Type | Non-Volatile |
Memory Size | 2Mb (256K x 8) |
Memory Interface | SPI |
Memory Format | FRAM |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | FRAM (Ferroelectric RAM) Memory IC 2Mb (256K x 8) SPI 25MHz 8-DIP |
Clock Frequency | 25MHz |