HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedIMB3AT110
Label and body marking of IMB3AT110 can be provided after order.
IMB3AT110
- Mega Source #: MEGA-IMB3AT110
- Manufacturer: LAPIS Technology
- Packaging: Tape & Reel (TR)
- Description: TRANS PREBIAS DUAL PNP SMT6
- RoHS Compliant: Lead free / RoHS Compliant
- Datasheet:
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In stock: 59069
Product Description
We are stocking distributor of IMB3AT110 with very competitive price. Check out IMB3AT110 newest pirce, inventory and lead time now by using the quick RFQ Form. Our commitment to quality and authenticity of IMB3AT110 is unwavering, and we have implemented stringent quality inspection and delivery processes to ensure the integrity of IMB3AT110. You can also find IMB3AT110 Datasheet here.
Specifications
Standard Packaging Integrated Circuit Components IMB3AT110
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 5mA |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Supplier Device Package | SMT6 |
| Series | - |
| Resistor - Emitter Base (R2) | - |
| Resistor - Base (R1) | 4.7 kOhms |
| Power - Max | 300mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 10 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 250MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 100mA |
| Base Part Number | MB3 |
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