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Standard Packaging Integrated Circuit Components SQM100P10-19L_GE3
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-263 (D²Pak) |
Series | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 30A, 10V |
Power Dissipation (Max) | 375W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 14100pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | P-Channel 100V 93A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak) |
Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |