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Standard Packaging Integrated Circuit Components IPD60R800CEATMA1
Vgs(th) (Max) @ Id | 3.5V @ 170µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252-3 |
Series | CoolMOS™ CE |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 2A, 10V |
Power Dissipation (Max) | 48W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Other Names | IPD60R800CEATMA1TR SP001276028 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 373pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 5.6A (Tc) 48W (Tc) Surface Mount TO-252-3 |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |