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Standard Packaging Integrated Circuit Components FQB8N60CTM-WS
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D²PAK (TO-263AB) |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names | FQB8N60CTM-WSCT FQB8N60CTM_WSCT FQB8N60CTM_WSCT-ND |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1255pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB) |
Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |