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Standard Packaging Integrated Circuit Components UNR412100A
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
Transistor Type | PNP - Pre-Biased |
Supplier Device Package | NS-B1 |
Series | - |
Resistor - Emitter Base (R2) | 2.2 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 300mW |
Packaging | Tape & Box (TB) |
Package / Case | 3-SSIP |
Other Names | UNR412100ATB |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 200MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole NS-B1 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 10V |
Current - Collector Cutoff (Max) | 1µA |
Current - Collector (Ic) (Max) | 500mA |