In stock: 56160
We are stocking distributor of SI3900DV-T1-E3 with very competitive price. Check out SI3900DV-T1-E3 newest pirce, inventory and lead time now by using the quick RFQ Form. Our commitment to quality and authenticity of SI3900DV-T1-E3 is unwavering, and we have implemented stringent quality inspection and delivery processes to ensure the integrity of SI3900DV-T1-E3. You can also find SI3900DV-T1-E3 Datasheet here.
Standard Packaging Integrated Circuit Components SI3900DV-T1-E3
Voltage - Test | - |
---|---|
Voltage - Breakdown | 6-TSOP |
Vgs(th) (Max) @ Id | 125 mOhm @ 2.4A, 4.5V |
Series | TrenchFET® |
RoHS Status | Digi-Reel® |
Rds On (Max) @ Id, Vgs | 2A |
Power - Max | 830mW |
Polarization | SOT-23-6 Thin, TSOT-23-6 |
Other Names | SI3900DV-T1-E3DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 15 Weeks |
Manufacturer Part Number | SI3900DV-T1-E3 |
Input Capacitance (Ciss) (Max) @ Vds | 4nC @ 4.5V |
Gate Charge (Qg) (Max) @ Vgs | 1.5V @ 250µA |
FET Feature | 2 N-Channel (Dual) |
Expanded Description | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
Drain to Source Voltage (Vdss) | Logic Level Gate |
Description | MOSFET 2N-CH 20V 2A 6-TSOP |
Current - Continuous Drain (Id) @ 25°C | 20V |