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Standard Packaging Integrated Circuit Components GA10JT12-263
Vgs(th) (Max) @ Id | - |
---|---|
Vgs (Max) | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Supplier Device Package | - |
Series | - |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 10A |
Power Dissipation (Max) | 170W (Tc) |
Packaging | Tube |
Package / Case | - |
Other Names | 1242-1186 GA10JT12-220ISO GA10JT12220ISO |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 18 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1403pF @ 800V |
FET Type | - |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Drain to Source Voltage (Vdss) | 1200V |
Detailed Description | 1200V 25A (Tc) 170W (Tc) Surface Mount |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |