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Standard Packaging Integrated Circuit Components GA10JT12-247
Vgs(th) (Max) @ Id | - |
---|---|
Vgs (Max) | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Supplier Device Package | TO-247AB |
Series | - |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 10A |
Power Dissipation (Max) | 170W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Other Names | 1242-1187 GA10JT12247 |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | - |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Drain to Source Voltage (Vdss) | 1200V |
Detailed Description | 1200V 10A (Tc) 170W (Tc) Through Hole TO-247AB |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |