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Standard Packaging Integrated Circuit Components MB85R256FPFCN-G-BNDE1
Write Cycle Time - Word, Page | 150ns |
---|---|
Voltage - Supply | 2.7 V ~ 3.6 V |
Technology | FRAM (Ferroelectric RAM) |
Supplier Device Package | 28-TSOP I |
Series | - |
Packaging | Tray |
Package / Case | 28-TSSOP (0.465", 11.80mm Width) |
Other Names | 865-1170 |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Memory Type | Non-Volatile |
Memory Size | 256Kb (32K x 8) |
Memory Interface | Parallel |
Memory Format | FRAM |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-TSOP I |
Access Time | 150ns |