Label and body marking of MB85R256GPF-G-BND-ERE1 can be provided after order.
In stock: 50597
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Standard Packaging Integrated Circuit Components MB85R256GPF-G-BND-ERE1
Write Cycle Time - Word, Page | 150ns |
---|---|
Voltage - Supply | 2.7 V ~ 3.6 V |
Technology | FRAM (Ferroelectric RAM) |
Series | - |
Operating Temperature | -40°C ~ 85°C (TA) |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Memory Type | Non-Volatile |
Memory Size | 256Kb (32K x 8) |
Memory Interface | Parallel |
Memory Format | FRAM |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns |
Access Time | 150ns |