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Standard Packaging Integrated Circuit Components SIDR626DP-T1-GE3
Vgs(th) (Max) @ Id | 3.4V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SO-8DC |
Series | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 20A, 10V |
Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
Packaging | Original-Reel® |
Package / Case | PowerPAK® SO-8 |
Other Names | SIDR626DP-T1-GE3DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 32 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 5130pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs | 102nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | N-Channel 60V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC |
Current - Continuous Drain (Id) @ 25°C | 42.8A (Ta), 100A (Tc) |