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Standard Packaging Integrated Circuit Components SIDR668DP-T1-GE3
Vgs(th) (Max) @ Id | 3.4V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SO-8DC |
Series | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 20A, 10V |
Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | PowerPAK® SO-8 |
Other Names | SIDR668DP-T1-GE3TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 32 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 108nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC |
Current - Continuous Drain (Id) @ 25°C | 23.2A (Ta), 95A (Tc) |