Label and body marking of 6116LA120TDB can be provided after order.
In stock: 58508
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Standard Packaging Integrated Circuit Components 6116LA120TDB
Write Cycle Time - Word, Page | 120ns |
---|---|
Voltage - Supply | 4.5 V ~ 5.5 V |
Technology | SRAM - Asynchronous |
Supplier Device Package | 24-CDIP |
Series | - |
Packaging | Tray |
Package / Case | 24-CDIP (0.300", 7.62mm) |
Other Names | IDT6116LA120TDB IDT6116LA120TDB-ND |
Operating Temperature | -55°C ~ 125°C (TA) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Memory Type | Volatile |
Memory Size | 16Kb (2K x 8) |
Memory Interface | Parallel |
Memory Format | SRAM |
Manufacturer Standard Lead Time | 10 Weeks |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Detailed Description | SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 120ns 24-CDIP |
Base Part Number | IDT6116 |
Access Time | 120ns |