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Standard Packaging Integrated Circuit Components 2N6661-E3
Vgs(th) (Max) @ Id | 2V @ 1mA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-39 |
Series | - |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 1A, 10V |
Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
Packaging | Tube |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Drain to Source Voltage (Vdss) | 90V |
Detailed Description | N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39 |
Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |