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Standard Packaging Integrated Circuit Components SIHB24N65ET1-GE3
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-263 (D²Pak) |
Series | E |
Rds On (Max) @ Id, Vgs | 145 mOhm @ 12A, 10V |
Power Dissipation (Max) | 250W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 2740pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak) |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |