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Standard Packaging Integrated Circuit Components FQPF33N10L
Vgs(th) (Max) @ Id | 2V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220F |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 9A, 10V |
Power Dissipation (Max) | 41W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 Full Pack |
Other Names | FQPF33N10L-ND FQPF33N10LFS |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 5 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1630pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 18A (Tc) 41W (Tc) Through Hole TO-220F |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |