Label and body marking of SQR50N04-3M8_GE3 can be provided after order.
In stock: 50061
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Standard Packaging Integrated Circuit Components SQR50N04-3M8_GE3
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D-PAK (TO-252) |
Series | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 20A, 10V |
Power Dissipation (Max) | 136W (Tc) |
Package / Case | TO-252-4, DPak (3 Leads + Tab) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 6700pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 40V |
Detailed Description | N-Channel 40V 50A (Tc) 136W (Tc) Through Hole D-PAK (TO-252) |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |