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Standard Packaging Integrated Circuit Components IPI80CN10N G
Vgs(th) (Max) @ Id | 4V @ 12µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO262-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 13A, 10V |
Power Dissipation (Max) | 31W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names | IPI80CN10N G-ND IPI80CN10NG SP000208938 SP000680758 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 716pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 13A (Tc) 31W (Tc) Through Hole PG-TO262-3 |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |