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Standard Packaging Integrated Circuit Components SIS903DN-T1-GE3
Vgs(th) (Max) @ Id | 1V @ 250µA |
---|---|
Supplier Device Package | PowerPAK® 1212-8 Dual |
Series | TrenchFET® Gen III |
Rds On (Max) @ Id, Vgs | 20.1 mOhm @ 5A, 4.5V |
Power - Max | 2.6W (Ta), 23W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | PowerPAK® 1212-8 Dual |
Other Names | SIS903DN-T1-GE3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2565pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
FET Type | 2 P-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |