Label and body marking of SI8499DB-T2-E1 can be provided after order.
In stock: 50682
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Standard Packaging Integrated Circuit Components SI8499DB-T2-E1
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
---|---|
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 6-Micro Foot™ (1.5x1) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 1.5A, 4.5V |
Power Dissipation (Max) | 2.77W (Ta), 13W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 6-MICRO FOOT™ |
Other Names | SI8499DB-T2-E1TR SI8499DBT2E1 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1) |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |