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Standard Packaging Integrated Circuit Components EPC8009ENGR
Voltage - Test | 47pF @ 32.5V |
---|---|
Voltage - Breakdown | Die |
Vgs(th) (Max) @ Id | 138 mOhm @ 500mA, 5V |
Technology | GaNFET (Gallium Nitride) |
Series | eGaN® |
RoHS Status | Tray |
Rds On (Max) @ Id, Vgs | 4.1A (Ta) |
Polarization | Die |
Other Names | 917-EPC8009ENGR EPC8009ENGG |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Part Number | EPC8009ENGR |
Input Capacitance (Ciss) (Max) @ Vds | 0.38nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 250µA |
FET Feature | N-Channel |
Expanded Description | N-Channel 65V 4.1A (Ta) Surface Mount Die |
Drain to Source Voltage (Vdss) | - |
Description | TRANS GAN 65V 4.1A BUMPED DIE |
Current - Continuous Drain (Id) @ 25°C | 65V |
Capacitance Ratio | - |