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Standard Packaging Integrated Circuit Components SPB80N06S08ATMA1
Vgs(th) (Max) @ Id | 4V @ 240µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3-2 |
Series | SIPMOS® |
Rds On (Max) @ Id, Vgs | 7.7 mOhm @ 80A, 10V |
Power Dissipation (Max) | 300W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names | SP000054056 SP000084808 SPB80N06S-08 SPB80N06S-08-ND SPB80N06S08 SPB80N06S08ATMA1TR SPB80N06S08T |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 3660pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 187nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 55V |
Detailed Description | N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2 |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |