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Standard Packaging Integrated Circuit Components TK9A55DA(STA4,Q,M)
Vgs(th) (Max) @ Id | 4V @ 1mA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220SIS |
Series | π-MOSVII |
Rds On (Max) @ Id, Vgs | 860 mOhm @ 4.3A, 10V |
Power Dissipation (Max) | 40W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 Full Pack |
Other Names | TK9A55DA(STA4QM) TK9A55DASTA4QM |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 550V |
Detailed Description | N-Channel 550V 8.5A (Ta) 40W (Tc) Through Hole TO-220SIS |
Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |