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Standard Packaging Integrated Circuit Components NTHD4N02FT1
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
---|---|
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | ChipFET™ |
Series | - |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.9A, 4.5V |
Power Dissipation (Max) | 910mW (Tj) |
Packaging | Tape & Reel (TR) |
Package / Case | 8-SMD, Flat Lead |
Other Names | NTHD4N02FT1OS |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
FET Type | N-Channel |
FET Feature | Schottky Diode (Isolated) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | N-Channel 20V 2.9A (Tj) 910mW (Tj) Surface Mount ChipFET™ |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Tj) |